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学术报告:Local Strain Engineering in Gallium Nitride Semiconductors

报告题目Local Strain Engineering in Gallium Nitride Semiconductors
报告人Pei-Cheng KuElectrical Engineering and Computer ScienceUniversity of Michigan
  The ability to integrate light emitters of different colors on a single chip platform is highly desirable for applications in microdisplays, lighting, biosensors, and optogenetics. Despite the remarkable efficiency, reliability, and high output brightness achievable by semiconductor LEDs, the development of chip-scale integration of multi-color emitters has been largely dominated by organic LEDs. Existing techniques for integrated RGB LED pixels include pick and place of different color emitters or phosphors on the same plane or stacking of multiple emitter planes. These approaches are limited in their manufacturability and the density of emitter pattern. In this talk, we will discuss a new approach utilizing local strain engineering in GaN materials. The strain field is locally modulated to shift the LED emission across the entire visible spectrum. The device design, fabrication and properties will be shown. Potential applications in microdisplays (including contact lens displays), LED lighting, and optogenetics will be discussed.
  P.C. Ku received all his degrees in electrical engineering including a BS from the National Taiwan University and a PhD from the University of California at Berkeley. He was awarded the Ross Tucker Memorial Award in 2004 as a result of his PhD research. He was with Intel from 2004 to 2005 before joining the University of Michigan in 2006 where he is currently an associate professor of electrical engineering and computer science. In 2010, he cofounded Arborlight that is dedicated to solid-state lighting system design and application. He received the DARPA Young Faculty Award in 2010.

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